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Volumn 99, Issue 9, 2011, Pages

Highly stable Al-doped ZnO transparent conductors using an oxidized ultrathin metal capping layer at its percolation thickness

(5) Chen, T L a Ghosh, D S a Krautz, D a Cheylan, S a Pruneri, V a,b

a ICFO INSTITUT DE CIENCIES FOTONIQUES (Spain)

b INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; CAPPING LAYER; COMBINED STRUCTURE; DAMP HEAT TESTING; INDIUM TIN OXIDE; METAL CAPPING LAYERS; PERCOLATION THRESHOLDS; PRODUCING EFFICIENCY; TRANSPARENT ANODES; TRANSPARENT CONDUCTORS; ULTRA-THIN;

GRAIN BOUNDARIES; HEAT RESISTANCE; ORGANIC LIGHT EMITTING DIODES (OLED); SOLVENTS; TIN; ULTRATHIN FILMS; ZINC OXIDE;

ALUMINUM;

EID: 80052536810 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3631674 Document Type: Article

Times cited : (57)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.