Characteristic improvements of ZnO-based metal-semiconductor-metal photodetector on flexible substrate with ZnO cap layer

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 1, 2010, Pages 0522011-0522013

  Ji, Liang Wen ^a   Wu, Cheng Zhi ^a   Lin, Chih Ming ^b   Meen, Teen Hang ^a   Lam, Kin Tak ^c   Peng, Shi Ming ^d   Young, Sheng Joue ^d   Liu, Chien Hung ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL TAITUNG UNIVERSITY   (Taiwan)

^c LEADER UNIVERSITY   (Taiwan)

^d NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; CAP LAYERS; CHARACTERISTIC IMPROVEMENT; COMPARATIVE ANALYSIS; FLEXIBLE SUBSTRATE; INCIDENT WAVELENGTH; LOW TEMPERATURES; METAL SEMICONDUCTOR METAL PHOTODETECTOR; NOVEL STRUCTURES; REJECTION RATIOS; SCHOTTKY BARRIER HEIGHTS; SPUTTERING PROCESS; STACK STRUCTURE; UV REGION; VISIBLE REGION; ZNO; ZNO FILMS;

ETHYLENE; HETEROJUNCTIONS; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; POLYETHYLENE TEREPHTHALATES; SCHOTTKY BARRIER DIODES; SUBSTRATES;

ZINC OXIDE;

EID: 77952735960     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.052201     Document Type: Article

References (25)

1. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto: Appl. Phys. Lett. 73 (1998) 1038.
2. M. Wraback, H. Shen, S. Liang, and Y. Lu: Appl. Phys. Lett. 74 (1999) 507.
3. D. Basak, G. Amin, B. Mallik, G. K. Paul, and S. K. Sen: J. Cryst. Growth 256 (2003) 73.
4. G. E. Jellison and L. A. Boatner: Phys. Rev. B 58 (1998) 3586.
5. M. Rebien, W. Henrion, M. Bar, and C. H. Fischer: Appl. Phys. Lett. 80 (2002) 3518.
6. D. G. Thomas: J. Phys. Chem. Solids 15 (1960) 86.
7. M. Bender, E. Gagaoudakis, E. Douloufakis, E. Natsakou, N. Katsarakis, V. Cimalla, G. Kiriakidis, E. Fortunato, P. Nunes, A. Marques, and R. Martins: Thin Solid Films 418 (2002) 45.
8. J. Androulakis, S. Gardelis, J. Giapintzakis, E. Gagaoudakis, and G. Kiriakidis: Thin Solid Films 471 (2005) 293.
9. H. Hosono, H. Ohta, M. Orita, K. Ueda, and M. Hirano: Vacuum 66 (2002) 419.
10. S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su: J. Cryst. Growth 293 (2006) 43.
11. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, and S. M. Peng: Semicond. Sci. Technol. 23 (2008) 085016.
12. M. Suchea, S. Christoulakis, K. Moschovis, N. Katsarakis, and G. Kiriakidis: Rev. Adv. Mater. Sci. 10 (2005) 335.
13. S. Liang, C. R. Gorla, N. Emanetoglu, Y. Liu, W. E. Mayo, and Y. Lu: J. Electron. Mater. 27 (1998) L72.
14. S. Logothetidis: Rev. Adv. Mater. Sci. 10 (2005) 387.
15. A. Laskarakis and S. Logothetidis: J. Appl. Phys. 99 (2006) 066101.
16. S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang, and X. L. Du: Semicond. Sci. Technol. 21 (2006) 1507.
17. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, K. T. Lam, S. H. Liang, X. L. Du, Q. K. Xue, and Y. S. Sun: IET Optoelectron. 1 (2007) 135.
18. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, Y. Horikoshi, and R. E. Hummel: J. Cryst. Growth 281 (2005) 513.
19. S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du: J. Electrochem. Soc. 154 (2007) H26.
20. R. E. Hummel: Electronic Properties of Materials (Springer, Berlin, 1993) 2nd ed., p. 373.
21. R. H. Yuang, Y. J. Chien, J. L. Shieh, and J. I. Chyi: Appl. Phys. Lett. 69 (1996) 245.
22. X. G. Zheng, Q. S. Li, W. Hu, D. Chen, N. Zhang, M. J. Shi, J. J. Wang, and L. C. Zhang: J. Lumin. 122 -123 (2007) 198.
23. T. Andelman, Y. Gong, G. Neumark, and S. O'Brien: J. Nanomater. 2007 (2007) 73824.
24. Z. Xu, H. Deng, J. Xie, Y. Li, and Y. Li: J. Sol-Gel Sci. Technol. 36 (2005) 223.
25. E. E. Reuter, S. Q. Gu, Q. Xu, W. Wohlmuth, I. Adesida, and S. G. Bishop: IEEE Photonics Technol. Lett. 6 (1994) 966.