Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes

Advances in OptoElectronics

Volumn 2012, Issue , 2012, Pages

  Kasper, E ^a   Oehme, M ^a   Arguirov, T ^b,c   Werner, J ^a   Kittler, M ^b,c   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b IHP   (Germany)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP NARROWING; CARRIER INJECTION; CURRENT LEVELS; DIRECT BAND GAP; EMISSION SHIFTS; FORWARD BIAS; HETEROSTRUCTURE LAYERS; HIGH DOPING LEVEL; INTRINSIC LAYER; LIGHT EMITTING DEVICES; MONOLITHIC INTEGRATION; N-DOPED; P-I-N HETEROJUNCTIONS; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE; SILICON MICROELECTRONICS; SILICON PHOTONICS; VISIBLE LASERS;

ELECTROLUMINESCENCE; ENERGY GAP; GERMANIUM; MICROELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; PHOTOLUMINESCENCE;

HETEROJUNCTIONS;

EID: 84858316216     PISSN: 1687563X     EISSN: 16875648     Source Type: Journal    
DOI: 10.1155/2012/916275     Document Type: Article

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