Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 504-506

  Fang, Hui ^a   Chuang, Steven ^a   Takei, Kuniharu ^a   Kim, Ha Sul ^a   Plis, Elena ^b   Liu, Chin Hung ^c   Krishna, Sanjay ^b   Chueh, Yu Lun ^c   Javey, Ali ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of New Mexico   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Field effect transistors (FETs); InAsSb; ultrathin body (UTB); XOI

Indexed keywords

ACTIVE CHANNELS; EFFECTIVE MOBILITIES; GATE LENGTH; HIGH MOBILITY; INAS; INASSB; INTRINSIC TRANSCONDUCTANCE; LAYER TRANSFER; MIXED ANION; SI SUBSTRATES; TRANSFER PROCESS; ULTRA-THIN; ULTRA-THIN-BODY; ULTRATHIN BODY (UTB); XOI;

ARSENIC COMPOUNDS; ELECTRON MOBILITY; INDIUM ARSENIDE; MESFET DEVICES;

INDIUM ANTIMONIDES;

EID: 84862807271     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2185477     Document Type: Article

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