-
1
-
-
0003527147
-
-
Springer, Heidelberg, Germany
-
Scott, "Ferroelectric memories", Springer, Heidelberg, Germany (2000).
-
(2000)
Ferroelectric Memories
-
-
-
2
-
-
29144456398
-
Physics of thin-film ferroelectric oxides
-
M. Dawber, K. M. Rabe and J. F. Scott, "Physics of thin-film ferroelectric oxides", Rev. Mod. Phys. 77(4), 1083-1130 (2005). http://dx.doi.org/10.1103/RevModPhys.77.1083
-
(2005)
Rev. Mod. Phys
, vol.77
, Issue.4
, pp. 1083-1130
-
-
Dawber, M.1
Rabe, K.M.2
Scott, J.F.3
-
3
-
-
35348846979
-
Ferroelectric memories
-
J. F. Scott and C. A. Araujo, "Ferroelectric memories", Science 246(4936), 1400-1405 (1989). http://dx.doi. org/10.1126/science.246.4936.1400
-
(1989)
Science
, vol.246
, Issue.4936
, pp. 1400-1405
-
-
Scott, J.F.1
Araujo, C.A.2
-
4
-
-
0032109136
-
The physics of ferroelectric memories
-
O. Auciello, J. F. Scott and R. Ramesh, "The physics of ferroelectric memories", Phys. Today 51(7), 22-27 (1998). http://dx.doi.org/10.1063/1.882324
-
(1998)
Phys. Today
, vol.51
, Issue.7
, pp. 22-27
-
-
Auciello, O.1
Scott, J.F.2
Ramesh, R.3
-
5
-
-
67650074774
-
Applied physics: A leak of information
-
P. Zubko and J.-M. Triscone, "Applied physics: a leak of information", Nature 460, 45-46 (2009). http://dx. doi.org/10.1038/460045a
-
(2009)
Nature
, vol.460
, pp. 45-46
-
-
Zubko, P.1
Triscone, J.-M.2
-
6
-
-
33748847480
-
Hysteretic resistance concepts in ferroelectric thin films
-
R. Meyer and R. Waser, "Hysteretic resistance concepts in ferroelectric thin films", J. Appl. Phys. 100(5), 051611-051618 (2006). http://dx.doi.org/10.1063/1.2337078
-
(2006)
J. Appl. Phys
, vol.100
, Issue.5
, pp. 051611-051618
-
-
Meyer, R.1
Waser, R.2
-
7
-
-
84859535747
-
Direct observation of ferroelectric polarization-modulated band bending at oxide interfaces
-
B. C. Huang, Y. T. Chen, Y. P. Chiu, Y. C. Huang, J. C. Yang, Y. C. Chen and Y. H. Chu, "Direct observation of ferroelectric polarization-modulated band bending at oxide interfaces" Appl. Phys. Lett. 100(12), 122903-122906 (2012). http://dx.doi.org/10.1063/1.3691615
-
(2012)
Appl. Phys. Lett
, vol.100
, Issue.12
, pp. 122903-122906
-
-
Huang, B.C.1
Chen, Y.T.2
Chiu, Y.P.3
Huang, Y.C.4
Yang, J.C.5
Chen, Y.C.6
Chu, Y.H.7
-
8
-
-
77957563001
-
3-Ta structure
-
L. Pintilie, V. Stancu, L. Trupina and I. Pintilie, "Ferroelectric schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure", Phys. Rev. B 82(8), 085319-085326 (2010). http://dx.doi.org/10.1103/PhysRevB.82.085319
-
(2010)
Phys. Rev. B
, vol.82
, Issue.8
, pp. 085319-085326
-
-
Pintilie, L.1
Stancu, V.2
Trupina, L.3
Pintilie, I.4
-
9
-
-
33746013199
-
Applied physics-tunneling across a ferroelectric
-
E. Y. Tsymbal and H. Kohlstedt, "Applied physics-tunneling across a ferroelectric" Science 313(5784), 181-183 (2006). http://dx.doi.org/10.1126/science.1126230
-
(2006)
Science
, vol.313
, Issue.5784
, pp. 181-183
-
-
Tsymbal, E.Y.1
Kohlstedt, H.2
-
10
-
-
27744552419
-
Giant electroresistance in ferroelectric tunnel junctions
-
M. Y. Zhuravlev, R. F. Sabirianov, S. S. Jaswal and E. Y. Tsymbal, "Giant electroresistance in ferroelectric tunnel junctions", Phys. Rev. Lett. 94(24), 246802-246805 (2005). http://dx.doi.org/10.1103/PhysRevLett.94.246802
-
(2005)
Phys. Rev. Lett
, vol.94
, Issue.24
, pp. 246802-246805
-
-
Zhuravlev, M.Y.1
Sabirianov, R.F.2
Jaswal, S.S.3
Tsymbal, E.Y.4
-
11
-
-
67650088391
-
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
-
V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthéléemy and M. Bibes, "Giant tunnel electroresistance for non-destructive readout of ferroelectric states", Nature 460(7251), 81-84 (2009). http://dx.doi.org/10.1038/nature08128
-
(2009)
Nature
, vol.460
, Issue.7251
, pp. 81-84
-
-
Garcia, V.1
Fusil, S.2
Bouzehouane, K.3
Enouz-Vedrenne, S.4
Mathur, N.D.5
Barthéléemy, A.6
Bibes, M.7
-
12
-
-
67149123647
-
Polarization control of electron tunneling into ferroelectric surfaces
-
P. Maksymovych, S. Jesse, P. Yu, R. Ramesh, A. P. Baddorf and S. V. Kalinin, "Polarization control of electron tunneling into ferroelectric surfaces", Science 324(5933), 1421-1425 (2009). http://dx.doi.org/10.1126/science.1171200
-
(2009)
Science
, vol.324
, Issue.5933
, pp. 1421-1425
-
-
Maksymovych, P.1
Jesse, S.2
Yu, P.3
Ramesh, R.4
Baddorf, A.P.5
Kalinin, S.V.6
-
13
-
-
77649194789
-
Ferroelectric control of spin polarization
-
V. Garcia, M. Bibes1, L. Bocher, S. Valencia, F. Kro-nast, A. Crassous, X. Moya, S. Enouz-Vedrenne, A. Gloter, D. Imhoff, C. Deranlot, N. D. Mathur, S. Fusil, K. Bouzehouane and A. Barth́eĺemy, "Ferroelectric control of spin polarization", Science 327(5969), 1106-1110 (2010). http://dx.doi.org/10.1126/science.1184028
-
(2010)
Science
, vol.327
, Issue.5969
, pp. 1106-1110
-
-
Garcia, V.1
Bibesl, M.2
Bocher, L.3
Valencia, S.4
Kro-Nast, F.5
Crassous, A.6
Moya, X.7
Enouz-Vedrenne, S.8
Gloter, A.9
Imhoff, D.10
Deranlot, C.11
Mathur, N.D.12
Fusil, S.13
Bouzehouane, K.14
-
14
-
-
12044258321
-
Ferroelectric schottky diode
-
P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen and M. P. C. M. Krijn, "Ferroelectric schottky diode", Phys. Rev. Lett. 73(15), 2107-2110 (1994). http://dx.doi. org/10.1103/PhysRevLett.73.2107
-
(1994)
Phys. Rev. Lett
, vol.73
, Issue.15
, pp. 2107-2110
-
-
Blom, P.W.M.1
Wolf, R.M.2
Cillessen, J.F.M.3
Krijn, M.P.C.M.4
-
15
-
-
36448999295
-
Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures
-
Y. Watanabe, "Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures", Appl. Phys. Lett. 66(1), 28-30 (1995). http://dx.doi.org/10.1063/1.114170
-
(1995)
Appl. Phys. Lett
, vol.66
, Issue.1
, pp. 28-30
-
-
Watanabe, Y.1
-
16
-
-
0038166628
-
1-xS ferroelectric schottky diodes
-
P. V. D. Sluis, "Non-volatile memory cells based on ZnxCd1-xS ferroelectric schottky diodes", Appl. Phys. Lett. 82(23), 4089-4091 (2003). http://dx.doi.org/ 10.1063/1.1581365
-
(2003)
Appl. Phys. Lett
, vol.82
, Issue.23
, pp. 4089-4091
-
-
Sluis, P.V.D.1
-
17
-
-
37549032719
-
3-δ/Si p - n heterostructure
-
G. Z. Liu, K. J. Jin, J. Qiu, M. He, H. B. Lu, J. Xing, Y. L. Zhou and G. Z. Yang, "Resistance switching in BaTiO3-δ/Si p - n heterostructure", Appl. Phys. Lett. 91(25), 252110-252113 (2007). http://dx.doi.org/10.1063/1.2821369
-
(2007)
Appl. Phys. Lett
, vol.91
, Issue.25
, pp. 252110-252113
-
-
Liu, G.Z.1
Jin, K.J.2
Qiu, J.3
He, M.4
Lu, H.B.5
Xing, J.6
Zhou, Y.L.7
Yang, G.Z.8
-
18
-
-
69049089851
-
3
-
S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.-H. Chu, C.-H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager and R. Ramesh, "Photovoltaic effects in BiFeO3", Appl. Phys. Lett. 95(6), 062909-062911 (2009). http://dx.doi.org/10.1063/1.3204695
-
(2009)
Appl. Phys. Lett
, vol.95
, Issue.6
, pp. 062909-062911
-
-
Yang, S.Y.1
Martin, L.W.2
Byrnes, S.J.3
Conry, T.E.4
Basu, S.R.5
Paran, D.6
Reichertz, L.7
Ihlefeld, J.8
Adamo, C.9
Melville, A.10
Chu, Y.-H.11
Yang, C.-H.12
Musfeldt, J.L.13
Schlom, D.G.14
Ager, J.W.15
Ramesh, R.16
-
19
-
-
79954450376
-
3 electrodes
-
Y. Shuai, S. Q. Zhou, C. G. Wu, W. L. Zhang, D. Bürger, S. Slesazeck, T. Mikolajick, M. Helm and H. Schmidt, "Memristor behaviors of highly oriented anatase TiO2 film sandwiched between top Pt and bottom SrRuO3 electrodes", Appl. Phys. Express 4(4), 041101-041103 (2011). http://dx.doi.org/10.1143/ APEX.4.041101
-
(2011)
Appl. Phys. Express
, vol.4
, Issue.4
, pp. 041101-041103
-
-
Shuai, Y.1
Zhou, S.Q.2
Wu, C.G.3
Zhang, W.L.4
Bürger, D.5
Slesazeck, S.6
Mikolajick, T.7
Helm, M.8
Schmidt, H.9
-
20
-
-
45849115098
-
Organic non-volatile memories from ferroelectric phase-separated blends
-
K. Asadi, D. M. D. Leeuw, B. D. Boer and P. W. M. Blom, "Organic non-volatile memories from ferroelectric phase-separated blends", Nature Mater.7(7), 547-550 (2008). http://dx.doi.org/10.1038/nmat2207
-
(2008)
Nature Mater
, vol.7
, Issue.7
, pp. 547-550
-
-
Asadi, K.1
Leeuw, D.M.D.2
Boer, B.D.3
Blom, P.W.M.4
-
21
-
-
70349694219
-
Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends
-
K. Asadi, T. G. de Boer, P. W. M. Blom and D. M. de Leeuw, "Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends", Adv. Funct. Mater. 19(19), 3173-3178 (2009). http://dx. doi.org/10.1002/adfm.200900383
-
(2009)
Adv. Funct. Mater
, vol.19
, Issue.19
, pp. 3173-3178
-
-
Asadi, K.1
de Boer, T.G.2
Blom, P.W.M.3
de Leeuw, D.M.4
-
22
-
-
64249168806
-
3
-
T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin and S.-W. Cheong, "Switchable ferroelectric diode and photovoltaic effect in BiFeO3", Science 324(5923), 63-66 (2009). http://dx.doi.org/10.1126/science.1168636
-
(2009)
Science
, vol.324
, Issue.5923
, pp. 63-66
-
-
Choi, T.1
Lee, S.2
Choi, Y.J.3
Kiryukhin, V.4
Cheong, S.-W.5
-
23
-
-
77953105322
-
Polarization-modulated rectification at ferroelectric surfaces
-
W. D. Wu, J. R. Guest, Y. Horibe, S. Park, T. Choi, S. W. Cheong and M. Bode, "Polarization-modulated rectification at ferroelectric surfaces", Phys. Rev. Lett. 104(21), 217601-217604 (2010). http://dx.doi.org/10.1103/PhysRevLett.104.217601
-
(2010)
Phys. Rev. Lett
, vol.104
, Issue.21
, pp. 217601-217604
-
-
Wu, W.D.1
Guest, J.R.2
Horibe, Y.3
Park, S.4
Choi, T.5
Cheong, S.W.6
Bode, M.7
-
24
-
-
79955713334
-
3-δ
-
C. J. Won, Y. A. Park, K. D. Lee, H. Y. Ryu and N. Hur, "Diode and photocurrent effect in ferroelectric BaTiO3-δ", J. Appl. Phys. 109(8), 084108-084111 (2011). http://dx.doi.org/10.1063/1.3569619
-
(2011)
J. Appl. Phys
, vol.109
, Issue.8
, pp. 084108-084111
-
-
Won, C.J.1
Park, Y.A.2
Lee, K.D.3
Ryu, H.Y.4
Hur, N.5
-
25
-
-
67349117817
-
3 films
-
C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin and R. Ramesh, "Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films", Nature Mater. 8(6), 485-493 (2009). http://dx.doi.org/10.1038/nmat2432
-
(2009)
Nature Mater
, vol.8
, Issue.6
, pp. 485-493
-
-
Yang, C.H.1
Seidel, J.2
Kim, S.Y.3
Rossen, P.B.4
Yu, P.5
Gajek, M.6
Chu, Y.H.7
Martin, L.W.8
Holcomb, M.B.9
He, Q.10
Maksymovych, P.11
Balke, N.12
Kalinin, S.V.13
Baddorf, A.P.14
Basu, S.R.15
Scullin, M.L.16
Ramesh, R.17
-
26
-
-
79952403920
-
3 thin-film capacitors
-
Q. Jiang, C. Wang, K. J. Jin, X. B. Liu, J. F. Scott, C. S. Hwang, T. A. Tang, H. B. Lu and G. Z. Yang, "A resistive memory in semiconducting BiFeO3 thin-film capacitors", Adv. Mater. 23(10), 1277-1281 (2011). http://dx.doi.org/10.1002/adma.201004317
-
(2011)
Adv. Mater
, vol.23
, Issue.10
, pp. 1277-1281
-
-
Jiang, Q.1
Wang, C.2
Jin, K.J.3
Liu, X.B.4
Scott, J.F.5
Hwang, C.S.6
Tang, T.A.7
Lu, H.B.8
Yang, G.Z.9
-
27
-
-
79959678468
-
3 thin films
-
Wang, K. J. Jin, Z. T. Xu, L. Wang, C. Ge, H. B. Lu, H. Z. Guo, M. He and G. Z. Yang, "Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films", Appl. Phys. Lett. 98(19), 192901-192903 (2011). http://dx.doi.org/10.1063/ 1.3589814
-
(2011)
Appl. Phys. Lett
, vol.98
, Issue.19
, pp. 192901-192903
-
-
Wang1
Jin, K.J.2
Xu, Z.T.3
Wang, L.4
Ge, C.5
Lu, H.B.6
Guo, H.Z.7
He, M.8
Yang, G.Z.9
-
28
-
-
80053922791
-
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
-
Lee, S. H. Baek, T. H. Kim, J. G. Yoon, C. M. Folk-man, C. B. Eom and T. W. Noh, "Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects", Phys. Rev. B 84(12), 125305-125313 (2011). http://dx.doi.org/10.1103/PhysRevB.84.125305
-
(2011)
Phys. Rev. B
, vol.84
, Issue.12
, pp. 125305-125313
-
-
Lee1
Baek, S.H.2
Kim, T.H.3
Yoon, J.G.4
Folk-Man, C.M.5
Eom, C.B.6
Noh, T.W.7
-
29
-
-
84876483893
-
3 nano-island based switchable diodes
-
S. Hong, T. Choi, J. H. Jeon, Y. Kim, H. Lee, H. Y. Joo, I. Hwang, J. S. Kim, S. O. Kang, S. V. Kalinin and B. H. Park, "Large resistive switching in ferroelectric BiFeO3 nano-island based switchable diodes", Adv. Mater. 25(16), 2339-2343 (2013). http://dx.doi.org/10.1002/adma.201204839
-
(2013)
Adv. Mater
, vol.25
, Issue.16
, pp. 2339-2343
-
-
Hong, S.1
Choi, T.2
Jeon, J.H.3
Kim, Y.4
Lee, H.5
Joo, H.Y.6
Hwang, I.7
Kim, J.S.8
Kang, S.O.9
Kalinin, S.V.10
Park, B.H.11
-
30
-
-
80155181874
-
Numerical investigation into the switch-able diode effect in metal-ferroelectric-metal structures
-
C. Ge, K. J. Jin, C. Wang, H. B. Lu, C. Wang and G. Z. Yang, "Numerical investigation into the switch-able diode effect in metal-ferroelectric-metal structures", Appl. Phys. Lett. 99(6), 063509-063511 (2011). http://dx.doi.org/10.1063/1.3624849
-
(2011)
Appl. Phys. Lett
, vol.99
, Issue.6
, pp. 063509-063511
-
-
Ge, C.1
Jin, K.J.2
Wang, C.3
Lu, H.B.4
Wang, C.5
Yang, G.Z.6
-
31
-
-
84858994086
-
Effect of ferroelectric parameters on ferroelectric diodes
-
C. Ge, K. J. Jin, C. Wang, H. B. Lu, C. Wang and G. Z. Yang, "Effect of ferroelectric parameters on ferroelectric diodes", J. Appl. Phys. 111(5), 054104-054108 (2012). http://dx.doi.org/10.1063/1.3692769
-
(2012)
J. Appl. Phys
, vol.111
, Issue.5
, pp. 054104-054108
-
-
Ge, C.1
Jin, K.J.2
Wang, C.3
Lu, H.B.4
Wang, C.5
Yang, G.Z.6
-
32
-
-
73449098911
-
Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
-
G. L. Yuan and J. L. Wang, "Evidences for the depletion region induced by the polarization of ferroelectric semiconductors", Appl. Phys. Lett. 95(25), 252904-252906 (2009). http://dx.doi.org/10.1063/1.3268783
-
(2009)
Appl. Phys. Lett
, vol.95
, Issue.25
, pp. 252904-252906
-
-
Yuan, G.L.1
Wang, J.L.2
-
33
-
-
78149342382
-
Atomic-scale compensation phenomena at polar interfaces
-
M. F. Chisholm, W. Luo, M. P. Oxley, S. T. Pantelides and H. N. Lee, "Atomic-scale compensation phenomena at polar interfaces", Phys. Rev. Lett. 105(19), 197602-197605 (2010). http://dx.doi.org/10.1103/PhysRevLett.105.197602
-
(2010)
Phys. Rev. Lett
, vol.105
, Issue.19
, pp. 197602-197605
-
-
Chisholm, M.F.1
Luo, W.2
Oxley, M.P.3
Pantelides, S.T.4
Lee, H.N.5
-
34
-
-
0015656842
-
Depolarization fields in thin ferroelectric films
-
R. R. Mehta, B. D. Silverman and J. T. Jacobs, "Depolarization fields in thin ferroelectric films", J. Appl. Phys. 44(8), 3379-3385 (1973). http://dx.doi.org/10.1063/1.1662770
-
(1973)
J. Appl. Phys
, vol.44
, Issue.8
, pp. 3379-3385
-
-
Mehta, R.R.1
Silverman, B.D.2
Jacobs, J.T.3
-
35
-
-
0032623974
-
Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors
-
C. T. Black and J. J. Welser, "Electric-field penetration into metals: consequences for high-dielectric-constant capacitors", IEEE Trans. Electron Devices 46(4), 776-780 (1999). http://dx.doi.org/10.1109/16.753713
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, Issue.4
, pp. 776-780
-
-
Black, C.T.1
Welser, J.J.2
-
36
-
-
33750532352
-
Self-consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems
-
F. Neumann, Y. A. Genenko, C. Melzer and H. von Seggern, "Self-consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems", J. Appl. Phys. 100(8), 084511-084518 (2006). http://dx. doi.org/10.1063/1.2360383
-
(2006)
J. Appl. Phys
, vol.100
, Issue.8
, pp. 084511-084518
-
-
Neumann, F.1
Genenko, Y.A.2
Melzer, C.3
von Seggern, H.4
-
37
-
-
34347324008
-
Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface
-
F. Neumann, Y. A. Genenko, C. Melzer, S. V. Yam-polskii and H. von Seggern, "Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface", Phys. Rev. B 75(20), 205322-205331 (2007). http://dx.doi.org/10.1103/ PhysRevB.75.205322
-
(2007)
Phys. Rev. B
, vol.75
, Issue.20
, pp. 205322-205331
-
-
Neumann, F.1
Genenko, Y.A.2
Melzer, C.3
Yam-Polskii, S.V.4
von Seggern, H.5
-
39
-
-
76649119087
-
Above-bandgap voltages from ferroelectric photovoltaic devices
-
S. Y. Yang, J. Seidel, S. J. Byrnes, P. Shafer, C. H. Yang, M. D. Rossell, P. Yu, Y. H. Chu, J. F. Scott, J. W. Ager, L. W. Martin and R. Ramesh, "Above-bandgap voltages from ferroelectric photovoltaic devices", Natue Nanotech. 5(2), 143-147 (2010). http://dx.doi.org/10.1038/nnano.2009.451
-
(2010)
Natue Nanotech
, vol.5
, Issue.2
, pp. 143-147
-
-
Yang, S.Y.1
Seidel, J.2
Byrnes, S.J.3
Shafer, P.4
Yang, C.H.5
Rossell, M.D.6
Yu, P.7
Chu, Y.H.8
Scott, J.F.9
Ager, J.W.10
Martin, L.W.11
Ramesh, R.12
-
40
-
-
77951181232
-
3 thin films
-
W. Ji, K. Yao and Y. C. Liang, "Bulk photovoltaic effect at visible wavelength in epitaxial ferroelectric BiFeO3 thin films", Adv. Mater. 22(15), 1763-1766 (2010). http://dx.doi.org/10. 1002/adma.200902985
-
(2010)
Adv. Mater
, vol.22
, Issue.15
, pp. 1763-1766
-
-
Ji, W.1
Yao, K.2
Liang, Y.C.3
-
41
-
-
80053263691
-
3 thin films
-
L. Wang, Y. L. Jin, K. J. Jin, C. Wang, H. B. Lu, C. Wang, C. Ge, X. Y. Chen, E. J. Guo and G. Z. Yang, "Photo-resistance and photo-voltage in epitaxial BiFeO3 thin films", Europhys. Lett. 96(1), 17008 (2011). http://dx.doi.org/10.1209/0295-5075/96/ 17008
-
(2011)
Europhys. Lett
, vol.96
, Issue.1
, pp. 17008
-
-
Wang, L.1
Jin, Y.L.2
Jin, K.J.3
Wang, C.4
Lu, H.B.5
Wang, C.6
Ge, C.7
Chen, X.Y.8
Guo, E.J.9
Yang, G.Z.10
-
42
-
-
77957676908
-
Mul-tiferroics: Past, present, and future
-
N. A. Spaldin, S. W. Cheong and R. Ramesh, "Mul-tiferroics: past, present, and future", Phys. Today 63(10), 38-43 (2010). http://dx.doi.org/10.1063/1. 3502547
-
(2010)
Phys. Today
, vol.63
, Issue.10
, pp. 38-43
-
-
Spaldin, N.A.1
Cheong, S.W.2
Ramesh, R.3
-
43
-
-
67649246400
-
Physics and applications of bismuth ferrite
-
G. Catalan and J. F. Scott, "Physics and applications of bismuth ferrite", Adv. Mater. 21(24), 2463-2485 (2009). http://dx.doi.org/10.1002/adma.200802849
-
(2009)
Adv. Mater
, vol.21
, Issue.24
, pp. 2463-2485
-
-
Catalan, G.1
Scott, J.F.2
-
44
-
-
79952140705
-
Recent progress in multiferroic magnetoelectric composites: From bulk to thin films
-
J. Ma, J. M. Hu, Z. Li and C. W. Nan, "Recent progress in multiferroic magnetoelectric composites: from bulk to thin films", Adv. Mater. 23(9), 1062-1087 (2011). http://dx.doi.org/10. 1002/adma.201003636
-
(2011)
Adv. Mater
, vol.23
, Issue.9
, pp. 1062-1087
-
-
Ma, J.1
Hu, J.M.2
Li, Z.3
Nan, C.W.4
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