Memristor behaviors of highly oriented anatase TiO2 film sandwiched between top Pt and bottom SrRuO3 electrodes

Applied Physics Express

Volumn 4, Issue 4, 2011, Pages

  Yoon, In Sung ^a   Choi, Jin Sik ^a   Kim, Yeon Soo ^a   Hong, Sa Hwan ^a   Hwang, In Rok ^a   Park, Yoon Chang ^b   Kang, Sung Oong ^a   Kim, Jin Soo ^a   Park, Bae Ho ^a  

^a Konkuk University   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE PHASE; ANATASE TIO; BEHAVIOR-BASED; CONDUCTION MECHANISM; DURATION TIME; ELECTRODE SIZE; ION MIGRATION; MEMRISTOR; RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING PULSE; SWITCHING VOLTAGES; TIO;

MEMRISTORS; PASSIVE FILTERS; PLATINUM; RESISTORS; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

SWITCHING;

EID: 79954450376     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.041101     Document Type: Article

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