Dopant-induced band filling and bandgap renormalization in CdO : in films

Journal of Physics D: Applied Physics

Volumn 46, Issue 19, 2013, Pages

  Zhu, Yuankun ^a   Mendelsberg, Rueben J ^b,c   Zhu, Jiaqi ^a   Han, Jiecai ^a   Anders, André ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLINGS; BAND GAP RENORMALIZATION; BAND GAP RENORMALIZATION EFFECTS; BURSTEIN-MOSS EFFECTS; CADMIUM OXIDE; ELECTRON-ELECTRON AND ELECTRON-ION INTERACTIONS; NONPARABOLIC CONDUCTION; THEORETICAL CALCULATIONS;

CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CONDUCTION BANDS; DOPING (ADDITIVES); ENERGY GAP; OPTICAL BAND GAPS;

OXIDE FILMS;

EID: 84876905449     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/19/195102     Document Type: Article

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