Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

Journal of Materials Science

Volumn 48, Issue 10, 2013, Pages 3789-3797

  Zhu, Yuankun ^a,b   Mendelsberg, Rueben J ^b,c   Zhu, Jiaqi ^a   Han, Jiecai ^a   Anders, André ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP RENORMALIZATION EFFECTS; BURSTEIN-MOSS SHIFT; CADMIUM OXIDE; DIFFERENT EFFECTS; FILM PROPERTIES; FILTERED CATHODIC ARC DEPOSITIONS; GLASS SUBSTRATES; LOW RESISTIVITY; MGO; NONPARABOLIC CONDUCTION; OPTIMIZED CONDITIONS; OXYGEN PRESSURE; SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURE; TEMPLATE LAYERS;

CADMIUM; CADMIUM COMPOUNDS; ELECTRIC PROPERTIES; FILM PREPARATION; GLASS; INDIUM; OPTICAL BAND GAPS; SAPPHIRE; SUBSTRATES;

OXIDE FILMS;

EID: 84874749081     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-013-7179-y     Document Type: Article

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