Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 129-132

  Iglesias, V ^a   Martin Martinez, J ^a   Porti, M ^a   Rodriguez, R ^a   Nafria, M ^a   Aymerich, X ^a   Erlbacher, T ^b   Rommel, M ^b   Murakami, K ^c   Bauer, A J ^b   Frey, L ^b,c   Bersuker, G ^d  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d SEMATECH   (United States)

Author keywords

Bimodal; Conductive atomic force microscopy; Dielectric breakdown; Grain boundaries; High k; Weibull distributions

Indexed keywords

BIMODAL; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL STRESS; GATE STACKS; HIGH-K; INTERFACIAL LAYER; NANO-SIZE; POLYCRYSTALLINE;

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; HAFNIUM OXIDES; LOGIC GATES; WEIBULL DISTRIBUTION;

GRAIN BOUNDARIES;

EID: 84876760772     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.022     Document Type: Article

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