A metal oxide heterostructure for resistive random access memory devices

Chinese Physics Letters

Volumn 30, Issue 4, 2013, Pages

  Liao, Zhao Liang ^a   Chen, Dong Min ^b  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; METALLIC COMPOUNDS; OXYGEN; OXYGEN VACANCIES; RANDOM ACCESS STORAGE;

DRIVING MECHANISM; ION VACANCY; METAL-OXIDE; OXYGEN IONS; OXYGEN MOBILITY; PERFORMANCE; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING DEVICES; VACANCY MIGRATION;

METALS;

EID: 84876524097     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/30/4/047701     Document Type: Article

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