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Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 4, 2013, Pages 1194-1202

Influence of nitrogen gas flow rate on the structural, morphological and electrical properties of sputtered TiN films

(6) Arshi, Nishat a Lu, Junqing a Joo, Yun Kon a Lee, Chan Gyu a Yoon, Jae Hong a Ahmed, Faheem a

a Changwon National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GRAIN STRUCTURE; ELECTRICAL RESISTIVITY MEASUREMENTS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; NANOCRYSTALLINE TITANIUMS; NITROGEN FLOW RATES; NITROGEN GAS FLOW; PREFERRED ORIENTATIONS; REACTIVE DC MAGNETRON SPUTTERING;

DEPOSITS; ELECTRIC CONDUCTIVITY; FIELD EMISSION MICROSCOPES; FLOW OF GASES; GRAIN SIZE AND SHAPE; METALLIC FILMS; NITROGEN; PHOTOELECTRONS; TITANIUM NITRIDE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FLOW RATE;

EID: 84876501354 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-012-0905-4 Document Type: Article

Times cited : (39)

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