Erratum: Enhanced H2 sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering (Journal of Materials Science: Materials in Electronics DOI: 10.1007/s10854-012-0927-y);Enhanced H2 sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 4, 2013, Pages 1325-1331

  Vijayalakshmi, K ^a   Karthick, K ^a   Tamilarasan, K ^b  

^a BISHOP HEBER COLLEGE   (India)

^b KONGU ENGINEERING COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; FILM GROWTH; GRAIN GROWTH; II-VI SEMICONDUCTORS; METALLIC FILMS; OXIDE FILMS; QUANTUM CONFINEMENT; SAPPHIRE; THIN FILMS; ZINC OXIDE; ZINC SULFIDE;

C-PLANE SAPPHIRE SUBSTRATES; HEXAGONAL WURTZITE STRUCTURE; HYDROGEN-SENSING; OPERATING TEMPERATURE; PHOTOLUMINESCENCE PROPERTIES; QUANTUM CONFINEMENT EFFECTS; SAPPHIRE SUBSTRATES; ZINC OXIDE (ZNO);

FILM PREPARATION;

EID: 84876476335     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-1060-7     Document Type: Erratum

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