|
|
Volumn 22, Issue 9, 2011, Pages 1415-1419
|
|
Effect of annealing temperature on electrical and nano-structural properties of sol-gel derived ZnO thin films
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ANNEALING TEMPERATURES;
ELECTRICAL RESISTIVITY;
LOSS FACTOR;
METAL-OXIDE- SEMICONDUCTORCAPACITORS;
OXIDE CAPACITANCE;
POLYCRYSTALLINE PHASE;
SIGNAL FREQUENCIES;
SILICON (100);
SILICON SUBSTRATES;
SOL-GEL SPIN COATING;
SPINNING SPEED;
ZNO;
ZNO FILMS;
ZNO THIN FILM;
AMORPHOUS FILMS;
AMORPHOUS MATERIALS;
ANNEALING;
CAPACITANCE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
GELS;
METALLIC COMPOUNDS;
METALLIC FILMS;
MOS CAPACITORS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SOL-GEL PROCESS;
SOL-GELS;
SOLS;
THIN FILMS;
VANADIUM;
X RAY DIFFRACTION;
ZINC COATINGS;
ZINC OXIDE;
OXIDE FILMS;
|
|
EID: 80055012147
PISSN: 09574522
EISSN: 1573482X
Source Type: Journal
DOI: 10.1007/s10854-011-0323-z Document Type: Article |
|
Times cited : (16)
|
|
References (17)
|
