Accurate determination of interface trap state parameters by admittance spectroscopy in the presence of a Schottky barrier contact: Application to ZnO-based solar cells

Journal of Applied Physics

Volumn 113, Issue 14, 2013, Pages

  Marin, Andrew T ^a   Musselman, Kevin P ^b   Macmanus Driscoll, Judith L ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; CAPTURE CROSS SECTIONS; DENSITY OF TRAP STATE; INTERFACE STATE RECOMBINATION; INTERFACE TRAP STATE; PHOTOVOLTAIC DEVICES; SCHOTTKY BARRIER CONTACTS; SOLUTION-PROCESSED;

BARS (METAL); ELECTRIC ADMITTANCE; ELECTRIC NETWORK ANALYSIS; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

INTERFACE STATES;

EID: 84876353258     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799633     Document Type: Article

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