Positive or negative gain: Role of thermal capture cross sections in impurity photovoltaic effect

Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

  Yuan, Jiren ^a,b   Shen, Honglie ^a   Huang, Haibin ^b   Deng, Xinhua ^b  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^b NANCHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CELL EFFICIENCY; DEVICE PERFORMANCE; IMPURITY LEVEL; NEGATIVE GAIN; NUMERICAL STUDIES; THERMAL CAPTURE CROSS SECTION; VALENCE BAND EDGES;

CONVERSION EFFICIENCY; EFFICIENCY; ELECTRONS; IMPURITIES; INDIUM; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR DEVICES; SOLAR POWER GENERATION;

PHOTOVOLTAIC EFFECTS;

EID: 82555192842     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663280     Document Type: Conference Paper

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