Influence of sputtering a ZnMgO window layer on the interface and bulk properties of Cu (In,Ga) Se2 solar cells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2384-2389

  Li, Jian V ^a   Li, Xiaonan ^a   Yan, Yanfa ^a   Jiang, Chun Sheng ^a   Metzger, Wyatt K ^a   Repins, Ingrid L ^a   Contreras, Miguel A ^a   Levi, Dean H ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; BOTTOM SURFACES; BULK PROPERTIES; CAPACITANCE VOLTAGE MEASUREMENTS; CU(IN , GA)SE; CU-POOR; DEEP LEVEL; DEPLETION REGION; DEVICE PERFORMANCE; ELECTRICAL PROPERTY; INTERFACE STATE; QUASI-FERMI LEVEL; REVERSE BIAS; SCANNING KELVIN PROBE FORCE MICROSCOPY; SECONDARY-ION MASS SPECTROSCOPY; SPUTTERING CONDITIONS; SURFACE DAMAGES; WINDOW LAYER; ZNMGO; ZNO;

ACTIVATION ENERGY; BIOACTIVITY; ELECTRIC PROPERTIES; MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; WINDOWS; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 72849148096     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3256230     Document Type: Conference Paper

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