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Applied Physics B: Lasers and Optics

Volumn 109, Issue 4, 2012, Pages 605-609

Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

(7) Liu, Yuanda a Liang, Hongwei a Xia, Xiaochuan a Shen, Rensheng a Liu, Yang a Bian, Jiming a Du, Guotong a,b

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b JILIN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BLOCKING LAYER; UV EMISSIONS; VISIBLE EMISSIONS; ZNO;

GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

LIGHT EMITTING DIODES;

EID: 84876284475 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-012-5219-y Document Type: Article

Times cited : (18)

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