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Volumn 91, Issue 9, 2007, Pages

Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; LOW TEMPERATURE EFFECTS; SEMICONDUCTING ZINC COMPOUNDS;

CURRENT BLOCKING LAYERS; RECOMBINATION;

THIN FILMS;

EID: 34548426550 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2777175 Document Type: Article

Times cited : (56)

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