The configurational energy gap between amorphous and crystalline silicon

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 10-11, 2011, Pages 361-363

  Kail, F ^a,b   Farjas, J ^a   Roura, P ^a   Secouard, C ^b   Nos, O ^c   Bertomeu, J ^c   Roca i Cabarrocas, P ^d  

^a UNIVERSITY OF GIRONA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

^c CEA GRENOBLE   (France)

^d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Configurational energy; Coordination defects; Crystallization; Differential scanning calorimetry; Enthalpy; Silicon

Indexed keywords

AMORPHOUS SILICON (A-SI); CONFIGURATIONAL ENERGY; COORDINATION DEFECTS; CRYSTALLINE SILICONS; CRYSTALLIZATION ENTHALPY; DEPOSITION TECHNIQUE; MINIMUM VALUE; VAPOUR-PHASE;

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEFECTS; DIFFERENTIAL SCANNING CALORIMETRY; ENERGY GAP; ENTHALPY; SILICON; SOLIDS;

AMORPHOUS SILICON;

EID: 80155212928     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105333     Document Type: Article

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