Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Applied Physics Letters

Volumn 102, Issue 13, 2013, Pages

  Mehrtens, T ^a   Schowalter, M ^a   Tytko, D ^b   Choi, P ^b   Raabe, D ^b   Hoffmann, L ^c   Jonen H ^c   Rossow, U ^c   Hangleiter, A ^c   Rosenauer, A ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; CONCENTRATION PROFILES; HIGH INDIUM CONTENTS; INDIUM CONCENTRATION; INGAN/GAN MULTI-QUANTUM WELL; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPECIMEN THICKNESS; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM;

EID: 84876098785     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799382     Document Type: Article

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