Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure

Acta Crystallographica Section A: Foundations of Crystallography

Volumn 65, Issue 3, 2009, Pages 227-231

  Schowalter, M ^a   Rosenauer, A ^a   Titantah, J T ^b   Lamoen, D ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Debye Waller factors; Density functional theory; Semiconductors; Wurtzite type structures

Indexed keywords

EID: 64349123292     PISSN: 01087673     EISSN: 16005724     Source Type: Journal    
DOI: 10.1107/S0108767309004966     Document Type: Article

References (29)

1. Bierwolf, R., Hohenstein, J., Phillipp, F., Brandt, O., Crook, G. E. & Ploog, K. (1993). Ultramicroscopy, 49, 273-285.
2. Blaha, P., Schwarz, K., Madsen, G. K. H., Kvasnicka, D. & Luitz, J. (2001). Wien2k, An augmented plane wave and local orbitals program for calculating crystal properties. K. Schwarz, Technische Universitä t Wien, Austria. ISBN 3-9501031-1-2.
3. Bungaro, C., Rapcewicz, K. & Bernholc, J. (2000). Phys. Rev. B, 61, 6720-6725.
4. Cros, A., Dimitrov, R., Angerer, H., Ambacher, O., Stutzmann, M., Christiansen, S., Albrecht, M. & Strunk, H. P. (1997). J. Cryst. Growth, 181, 197-203.
5. Davydov, V. Yu., Klochikhin, A., Smirnov, M. B., Emtsev, V. V., Petrikov, V. D., Abroyan, I. A., Titov, A. I., Goncharuk, I. N., Smirnov, A. N., Mamutin, V. V., Ivanov, S. V. & Inushima, T. (1999). Phys. Status Solidi B, 216, 779-783.
6. Filippidis, L., Siegle, H., Hoffmann, A., Thomsen, C., Karch, K. & Bechstedt, F. (1996). Phys. Status Solidi B, 198, 621-627.
7. Giehler, M., Ramsteiner, M., Brandt, O., Yang, H. & Ploog, K. H. (1995). Appl. Phys. Lett. 67, 733-735.
8. Gonze, X., Beuken, J.-M., Caracas, R., Detraux, F., Fuchs, M., Rignanese, G.-M., Sindic, L., Verstraete, M., Zerah, G., Jollet, F., Torrent, M., Roy, A., Mikami, M., Ghosez, Ph., Raty, J.-Y. & Allan, D. C. (2002). Comput. Mater. Sci. 25, 478-492.
9. Grillo, V., Carlino, E. & Glas, F. (2008). Phys. Rev. B, 77, 054103.
10. Lemos, V., Argello, C. A. & Leite, R. C. C. (1972). Solid State Commun. 11, 1351-1353.
11. Manjon, F. J., Errandonea, D., Romero, A., Garro, N., Serrano, J. & Kuball, M. (2008). Phys. Rev. B, 77, 205204.
12. Monkhorst, H. J. & Pack, J. D. (1976). Phys. Rev. B, 13, 5188-5192.
13. Nakamura, S., Mukai, T. & Senoh, M. (1994). Appl. Phys. Lett. 64, 1687-1689.
14. O ̈ zgü r, Ü ., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M. A., Doǧan, S., Avrutin, V., Cho, S.-J. & Morkoç, H. (2005). J. Appl. Phys. 98, 041301.
15. Parlinski, K. & Kawazoe, Y. (1999). Phys. Rev. B, 60, 15511-15514.
16. Parlinski, K., Li, Z. Q. & Kawazoe, Y. (1997). Phys. Rev. Lett. 78, 4063-4066.
17. Rosenauer, A. (2003). Transmission Electron Microscopy of Semiconductor Nanostructures - An Analysis of Composition and Strain.Springer Tracts in Modern Physics, No. 182. Heidelberg, Berlin: Springer.
18. Rosenauer, A., Gerthsen, D. & Potin, V. (2006). Phys. Status Solidi A, 203, 176-184.
19. Rosenauer, A., Kaiser, S., Reisinger, T., Zweck, J. & Geb, W. (1996). Optik, 102, 63-69.
20. Rosenauer, A., Schowalter, M., Pretorius, A., Dartsch, H., Figge, S., Hommel, D., Avramescu, A., Engl, K. & Lutgen, S. (2008). Ultramicroscopy. Submitted.
21. Schowalter, M., Rosenauer, A., Titantah, J. T. & Lamoen, D. (2009). Acta Cryst. A65, 5-17.
22. Schulz, H. & Thiemann, K. H. (1977). Solid State Commun. 23, 815- 819.
23. Schwoerer-Bö hning, M., Macrander, A. T., Pabst, M. & Pavone, P. (1999). Phys. Status Solidi B, 215, 177-180.
24. Serrano, J., Manjon, F. J., Romero, A., Ivanov, A., Lauck, R., Cardona, M. & Krisch, K. (2007). Phys. Status Solidi B, 244, 1478- 1482.
25. Siegel, A., Parlinski, K. & Wdowik, U. D. (2006). Phys. Rev. B, 74, 104116.
26. Tabata, A., Enderlein, R., Leite, J. R., da Silva, S. W., Galzerani, J. C., Schikora, D., Kloidt, M. & Lischka, K. (1996). J. Appl. Phys. 79, 4137-4140.
27. Troullier, N. & Martins, J. L. (1991). Phys. Rev. B, 43, 1993-2006.
28. Vila, F. D., Rehr, J. J., Rossner, H. H. & Krappe, H. J. (2007). Phys. Rev. B, 76, 014301.
29. Xiong, X. & Moss, S. C. (1997). J. Appl. Phys. 82, 2308-2311.