Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Muller M ^a   Gault, B ^a,b   Smith, G D W ^a   Grovenor, C R M ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM LASERS; ATOMS; DISSOCIATION; PILES; PROBES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

ATOM PROBE TOMOGRAPHY; COMPOUND SEMICONDUCTORS; DATA RECONSTRUCTION; EXPERIMENTAL PARAMETERS; LATERAL RESOLUTION; NANOSCALE STRUCTURE; SEMICONDUCTOR APPLICATIONS; SURFACE MIGRATION;

PULSED LASERS;

EID: 82955242447     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012031     Document Type: Conference Paper

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