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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 4, 2013, Pages 667-672

Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

(14) Rodrigues, J a Miranda, S M C b Fernandes, A J S a Nogales, E d Alves, L C b,c Alves, E b,c Tourbot, G e Auzelle, T e Daudin, B e Mendez B d Trindade, T a Lorenz, K b,c Costa, F M a Monteiro, T a

a UNIVERSITY OF AVEIRO (Portugal)

b INSTITUTO SUPERIOR TÉCNICO (Portugal)

c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

d UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

e CEA GRENOBLE (France)

Author keywords

GaN; Nanowires; PL; Yellow luminescence

Indexed keywords

ANNEALING TREATMENTS; GALLIUM NITRIDES (GAN); GAN; OPTICALLY ACTIVE DEFECTS; PL; ROOM TEMPERATURE; YELLOW LUMINESCENCE; YELLOW LUMINESCENCE BANDS;

DEFECTS; ION IMPLANTATION; LUMINESCENCE; NANOWIRES;

GALLIUM NITRIDE;

EID: 84876089763 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201200714 Document Type: Article

Times cited : (9)

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