Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps

Nano Letters

Volumn 13, Issue 4, 2013, Pages 1410-1415

  Lubk, A ^a,f   Rossell, M D ^b   Seidel, J ^c   Chu, Y H ^d   Ramesh, R ^e   Hytch M J ^f   Snoeck, E ^f  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e University of California Berkeley   (United States)

^f UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

dislocation; domain wall; Ferroelectricity; finite size effect

Indexed keywords

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; DEVICE OPTIMIZATION; FERROELECTRIC FIELD EFFECT TRANSISTORS; FINITE SIZE EFFECT; LATTICE STRUCTURES; PHASE-FIELD SIMULATION; PIEZOELECTRIC COUPLINGS; PIEZOELECTRIC TENSOR;

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); DOMAIN WALLS; ELECTROMECHANICAL COUPLING; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; PIEZOELECTRICITY; POLARIZATION; TRANSMISSION ELECTRON MICROSCOPY;

EDGE DISLOCATIONS;

BERYLLIUM; BERYLLIUM OXIDE; FERRIC ION; FERRIC OXIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRICITY; PARTICLE SIZE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR;

BERYLLIUM; ELECTRICITY; FERRIC COMPOUNDS; MICROSCOPY, ELECTRON, SCANNING TRANSMISSION; NANOSTRUCTURES; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84876043729     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304229k     Document Type: Article

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