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Volumn 108, Issue 4, 2012, Pages

Atomic structure of highly strained BiFeO 3 thin films

(8) Rossell, M D a,b Erni, R a Prange, M P c,d Idrobo, J C c,d Luo, W e Zeches, R J f Pantelides, S T c,d Ramesh, R f,g,h

a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY (Switzerland)

b ETH ZURICH (Switzerland)

c VANDERBILT UNIVERSITY (United States)

d OAK RIDGE NATIONAL LABORATORY (United States)

e STANFORD UNIVERSITY (United States)

f UNIVERSITY OF CALIFORNIA (United States)

g LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

h University of California Berkeley (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-RESOLUTION; DIRECT IMAGING; FE ATOMS; HIGHLY STRAINED; MULTIFERROICS; R PHASE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPONTANEOUS POLARIZATIONS; T-PHASE;

ATOMIC SPECTROSCOPY; ATOMS; BISMUTH; DISSOCIATION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 84856145875 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.108.047601 Document Type: Article

Times cited : (107)

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