The effect of the photo-induced carriers on the reliability of oxide TFTs under various intensities of light

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 218-220

  Lee, Soo Yeon ^a   Kim, Sun Jae ^a   Lee, Young Wook ^a   Lee, Woo Geun ^b   Yoon, Kap Soo ^b   Kwon, Jang Yeon ^c   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

Light illumination; oxide thin film transistors (TFTs); reliability

Indexed keywords

BASIC MECHANISM; DETERMINANT FACTORS; GATE INSULATOR; LIGHT ILLUMINATION; NEGATIVE GATE; PHOTO-INDUCED; SINGLE HOLE; TRAPPING PROBABILITIES;

HOLE CONCENTRATION; RELIABILITY;

THIN FILM TRANSISTORS;

EID: 84856247419     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2177633     Document Type: Article

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