Benefit of selective emitters for p-Type silicon solar cells with passivated surfaces

IEEE Journal of Photovoltaics

Volumn 3, Issue 2, 2013, Pages 621-627

  Jäger, Ulrich ^a   MacK, Sebastian ^a   Wufka, Christoph ^a   Wolf, Andreas ^a   Biro, Daniel ^a   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Laser doping; passivated emitter and rear cell; selective emitter; silicon solar cell

Indexed keywords

CONTACT QUALITY; FLOAT ZONE SILICON; LASER DOPING; PASSIVATED SURFACE; PHOSPHOSILICATE GLASS; SATURATION CURRENT; SATURATION CURRENT DENSITIES; SELECTIVE EMITTERS;

CELLS; CURRENT DENSITY; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON; SILICON SOLAR CELLS;

CYTOLOGY;

EID: 84875583169     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2230685     Document Type: Article

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