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Volumn 83, Issue 12, 2012, Pages

Advance in multi-hit detection and quantization in atom probe tomography

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; BORON IN SILICON; CHEMICAL COMPOSITIONS; CONCENTRATION MEASUREMENT; FIELD EVAPORATION; INNOVATIVE METHOD; POSITION SENSITIVE; POSITION-SENSITIVE DETECTORS;

EID: 84875469642     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4770120     Document Type: Article
Times cited : (87)

References (24)
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  • 9
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    • M., Ngamo, S., Duguay, F., Cristiano, K., Daoud-Ketata, and P., Pareige, " Atomic scale study of boron interstitial clusters in ion-implanted silicon. ", J. Appl. Phys., 105, 104904 (2009). 10.1063/1.3126498
    • (2009) J. Appl. Phys. , vol.105 , pp. 104904
    • Ngamo, M.1    Duguay, S.2    Cristiano, F.3    Daoud-Ketata, K.4    Pareige, P.5
  • 23
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    • et al., , 10.1016/j.apsusc.2008.05.051
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.