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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

Dopant measurements in semiconductors with atom probe tomography

(3) Ronsheim, P A a Hatzistergos, M a Jin, S b

a IBM RESEARCH (United States)

b J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE; ATOM PROBE TOMOGRAPHY; BORON IN SILICON; DATA SETS; DEVICE GEOMETRIES; DOPANT DISTRIBUTION; IN-SITU CONCENTRATIONS; PREDICTIVE MODELS; REFERENCE VALUES; STRAIN CONDITIONS;

BORON; BORON COMPOUNDS; PROBES; SECONDARY ION MASS SPECTROMETRY; TOMOGRAPHY;

ATOMS;

EID: 77949413911 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3242422 Document Type: Conference Paper

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.