High total-dose proton radiation tolerance in TiN/HfO2/TiN ReRAM devices

Materials Research Society Symposium Proceedings

Volumn 1430, Issue , 2012, Pages 165-170

  He, Xiaoli ^a   Geer, Robert E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; PERFORMANCE PARAMETERS; RADIATION TOLERANCES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MECHANISMS; TRAP ASSISTED TUNNELING;

HAFNIUM; HAFNIUM OXIDES; RANDOM ACCESS STORAGE; SILICON; SWITCHING SYSTEMS;

TITANIUM NITRIDE;

EID: 84875427263     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2012.1101     Document Type: Conference Paper

References (11)

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