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Volumn 269, Issue , 2013, Pages 88-91
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The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition
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Author keywords
Neutron irradiation; Plasma CVD; Silicon carbide layer; Structural and electrical characterization
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Indexed keywords
AMORPHOUS SILICON;
CHEMICAL ANALYSIS;
DOPING (ADDITIVES);
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
NEUTRON IRRADIATION;
NEUTRONS;
NITROGEN PLASMA;
PASSIVATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RADIATION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILICON CARBIDE;
SILICON SOLAR CELLS;
AMORPHOUS SILICON CARBIDE (A-SIC);
ELASTIC RECOIL DETECTION;
ELECTRICAL CHARACTERIZATION;
FOURIER TRANSFORM INFRA RED (FTIR) SPECTROSCOPY;
NITROGEN DOPED SILICONS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD);
RUTHERFORD BACKSCATTERING SPECTROMETRY;
SILICON CARBIDES (SIC);
PLASMA CVD;
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EID: 84875420569
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2012.10.162 Document Type: Conference Paper |
Times cited : (13)
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References (20)
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