Potentials and development of amorphous silicon carbide heterojunction solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000794-000799

  Pysch, D ^a   Ziegler, J ^a   Becker, J P ^a   Suwito, D ^a   Janz, S ^a   Glunz, S W ^a   Hermie, M ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; COMPLEX SYSTEMS; FRONT SURFACES; HETEROJUNCTION EMITTERS; HETEROJUNCTION INTERFACES; HETEROJUNCTION SOLAR CELLS; HOT PLATES; N-DOPED; OPTIMUM CONDITIONS; POST DEPOSITION ANNEALING; RELAXATION RATES; SILICON HETEROJUNCTIONS; SOLAR CELL PERFORMANCE; STRETCHED EXPONENTIAL FUNCTIONS; THERMAL-ANNEALING;

ANNEALING; DANGLING BONDS; EXPONENTIAL FUNCTIONS; HETEROJUNCTIONS; HYDROGEN BONDS; OPEN CIRCUIT VOLTAGE; SILICON CARBIDE; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 77951589636     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411165     Document Type: Conference Paper

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