Effect of deposition temperature on the properties of amorphous silicon carbide thin films

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 651-653

  Huran, J ^a   Hotovy I ^b   Pezoltd, J ^c   Balalykin, N I ^d   Kobzev, A P ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^d JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

IR; PECVD; RBS; Silicon carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DEPOSITION; NITROGEN; OXYGEN; SURFACE PROPERTIES; THIN FILMS;

DEPOSITION TEMPERATURE; FILM SURFACE; PARALLEL-PLATE PLASMA REACTOR; RBS;

SILICON CARBIDE;

EID: 33748754946     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.231     Document Type: Article

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