Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photoelectrochemical applications

Chemical Vapor Deposition

Volumn 19, Issue 1-3, 2013, Pages 45-52

  Kim, Sun Ja ^a   Xu, Ke ^a   Parala, Harish ^a   Beranek, Radim ^a   Bledowski, Michal ^a   Sliozberg, Kirill ^a   Becker, Hans Werner ^a   Rogalla, Detlef ^a   Barreca, Davide ^b   Maccato, Chiara ^b   Sada, Cinzia ^b   Schuhmann, Wolfgang ^a   Fischer, Roland A ^a   Devi, Anjana ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

MOCVD; N coordinated Ti precursor; N doping; Photocurrent; TiO2 thin films

Indexed keywords

BOROSILICATE GLASS SUBSTRATES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; N-DOPING; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTROCHEMICAL PROPERTIES; RUTHERFORD BACK-SCATTERING; TI PRECURSOR; TIO;

AMIDES; ATOMIC FORCE MICROSCOPY; BOROSILICATE GLASS; ELECTROCHEMISTRY; FIELD EMISSION MICROSCOPES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOCURRENTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; TIN OXIDES; VAPOR DEPOSITION; X RAY DIFFRACTION;

TITANIUM DIOXIDE;

EID: 84875181968     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.201206996     Document Type: Article

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