Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-5

  Salomon, Damien ^a,b   Dussaigne, Amelie ^b   Lafossas, Matthieu ^b   Durand, Christophe ^a   Bougerol, Catherine ^c   Ferret, Pierre ^b   Eymery, Joel ^a  

^a UNIV GRENOBLE ALPES   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

Author keywords

LED; MOVPE; Nanowires; Nitrides

Indexed keywords

ALUMINUM NITRIDE; DOPING (ADDITIVES); GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; NITRIDES; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS; WIRE;

BACKSIDE CONTACT; FORWARD BIAS; GROWTH OF GAN; METAL-ORGANIC VAPOUR PHASE EPITAXY; METALLIC TIPS; SI SUBSTRATES; SI(111) SUBSTRATE; SINGLE WIRES;

SILICON;

EID: 84875135133     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-61     Document Type: Article

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