Selective area growth of GaN nanowires using metalorganic chemical vapor deposition on nano-patterned Si(111) formed by the etching of nano-sized Au droplets

Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 126-130

  Song, Ki Young ^a   Navamathavan, R ^a   Park, Ji Hyeon ^a   Ra, Yeom Bo ^a   Ra, Yong Ho ^a   Kim, Jin Soo ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Droplets; Etching; Gallium nitride; Gold; Nanowires; Patterning; Scanning electron microscopy

Indexed keywords

AU DROPLETS; BULK GRAINS; ETCHING PROCESS; GROWTH OF GAN; HIGH QUALITY; NANO DEVICE; NANO PATTERN; NANO-DROPLETS; NANO-SIZED; NANOPATTERNING; PATTERNING; SCANNING ELECTRONS; SELECTIVE AREA GROWTH; SI (1 1 1); SI(111) SUBSTRATE; SUBSTRATE SURFACE;

DROPS; ETCHING; GALLIUM ALLOYS; GOLD; GOLD COATINGS; GOLD DEPOSITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON COMPOUNDS; SUBSTRATES;

GALLIUM NITRIDE;

EID: 80054044482     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.083     Document Type: Article

References (23)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagaham Jpn. J. Appl. Phys. Lett. 134 1995 797
2. S. Nakamura, and G. Fasol The Blue Laser Diode 1997 Springer Berlin
3. M.S. Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.W. Burm, and M.S. Shur Appl. Phys. Lett. 65 1994 1121
4. H.M. Kim, Y.H. Cho, H. Lee, S.I. Kim, S.R. Ryu, G.Y. Kim, T.W. Kang, and K.S. Chung Nano Lett. 4 2004 1059
5. R. Calarco, R.J. Meijers, R.K. Debnath, T. Stoica, E. Sutter, and H. Luth Nano Lett. 7 2007 2248
6. S. Gradecak, F. Qian, Y. Li, H.G. Park, and C.M. Lieber Appl. Phys. Lett. 87 2005 173111
7. A.B. Greytak, L.J. Lauhon, M.S. Gudiksen, and C.M. Lieber Appl. Phys. Lett. 84 2004 4176
8. H.M. Kim, D.S. Kim, D.Y. Kim, T.W. Kang, Y.H. Cho, and K.S. Chung Appl. Phys. Lett. 81 2002 2193
9. K.A. Bertness, A.W. Sanders, D.M. Rourke, T.E. Harvey, A. Roshko, J.B. Schlager, and N.A. Sanford Adv. Funct. Mater. 20 2010 2911
10. L.W. Tu, C.L. Hsiao, T.W. Cho, I. Lo, and K.Y. Hsieh Appl. Phys. Lett. 82 2003 1601
11. Y.H. Kim, J.Y. Lee, S.H. Lee, J.E. Oh, H.S. Lee, and Y. Huh Chem. Phys. Lett. 412 2005 454
12. G.T. Wang, A.A. TalD.J. Werder, J.R. Creighton, E. Lai, R.J. Anderson, and I. Arslan Nanotechnology 17 2006 5773
13. R. Koester, J.S. Hwang, C. Duard, D.L.S. Dang, and J. Eymery Nanotechnology 21 2010 015602
14. T. Wang, R. Ranalli, P.J. Parbrook, R. Airey, J. Bai, R. Rattlidge, and G. Hill Appl. Phys. Lett. 86 2005 103103
15. G. Kipshidze, B. Yavich, A. Chandolu, J. Yun, V. Kuryatkov, I. Ahmad, D. Aurongzeb, M. Holtz, and H. Temkin Appl. Phys. Lett. 86 2005 033104-1
16. Y.H. Ra, R. Navamathavan, J.H. Park, K.Y. Song, Y.M. Lee, D.W. Kim, B.B. Jun, and C.R. Lee Jpn. J. Appl. Phys. 49 2010 091003
17. T. Stoica, E. Sutter, R.J. Meijers, R.K. Debnath, R. Calarco, H. Luth, and D. Grutzmacher Small 4 2008 751
18. F. Qian, Y. Li, S. Gradecak, D. Wang, C.J. Barrelet, and C.M. Lieber Nano Lett. 4 2004 1975
19. R. Calarco, and M. Marso Appl. Phys. A 87 2007 499
20. R.S. Wagner, and W.C. Ellis Appl. Phys. Lett. 4 1964 89
21. E.S. Jang, Y.H. Ra, Y.M. Lee, S.H. Yun, D.W. Kim, R. Navamathavan, J.S. Kim, I.H. Lee, and C.R. Lee Jpn. J. Appl. Phys. 48 2009 09001
22. Y.H. Ra, R. Navamathavan, Y.M. Lee, D.W. Kim, J.S. Kim, I.H. Lee, and C.R. Lee J. Cryst. Growth 312 2010 770
23. R. Navamathavan, Y.H. Ra, K.Y. Song, D.W. Kim, and C.R. Lee Curr. Appl. Phys. 11 2011 77