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MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

Effect of magnesium and silicon on the lateral overgrowth of GaN patterned substrates by metal organic vapor phase epitaxy

(3) Haffouz, S a Beaumont, B a Gibart, Pierre a

a CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANISOTROPY; ATMOSPHERIC PRESSURE; COALESCENCE; CONCENTRATION (PROCESS); DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SUBSTRATES;

CARRIER GAS; EPITAXIAL LATERAL MASK OVERGROWTH; FLOW RATE; HALIDE VAPOR PRESSURE EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 4043069177 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300000806 Document Type: Article

Times cited : (6)

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