Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 73-77

  Heppel, S ^a,d   Wirth, R ^a   Off, J ^a   Scholz, F ^a   Hangleiter, A ^a   Obloh, H ^b   Wagner, J ^b   Kirchner, C ^c   Kamp, M ^c  

^a UNIVERSITY OF STUTTGART   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIVERSITY OF ULM   (Germany)

^d TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; MATRIX ALGEBRA; NITRIDES; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

GALLIUM INDIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0033221694     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<73::AID-PSSA73>3.0.CO;2-6     Document Type: Article

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