Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 497-499

  Cheng, Huang Chung ^a   Yang, Po Yu ^a   Wang, Jyh Liang ^b   Agarwal, Sanjay ^a   Tsai, Wei Chih ^c   Wang, Shui Jinn ^d   Lee, I Che ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Hydrothermal method; lateral grain growth; thin film transistor (TFT); zinc oxide (ZnO)

Indexed keywords

ACTIVE CHANNELS; ALUMINUM-DOPED ZNO; CRYSTAL GRAINS; CURRENT DRIVABILITY; CURRENT RATIOS; HIGH FIELD; HIGH QUALITY; HYDROTHERMAL METHODS; HYSTERESIS PHENOMENON; LATERAL GRAIN GROWTH; LOW TEMPERATURES; LOW THRESHOLD VOLTAGE; SEED LAYER; SINGLE GRAIN BOUNDARIES; STANDARD DEVIATION; ZNO;

FILM GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79953052801     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2103921     Document Type: Article

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