Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Solid-State Electronics

Volumn 82, Issue , 2013, Pages 82-85

  Min, K S ^a,d,e   Park, C ^e   Kang, C Y ^e   Park, C S ^e   Park, B J ^f   Kim, Y W ^b   Lee, B H ^c   Lee, Jack C ^d   Bersuker, G ^e   Kirsch, P ^e   Jammy, R ^e   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Seoul National University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d The University of Texas at Austin   (United States)

^e SEMATECH   (United States)

^f SAMSUNG Electronics   (South Korea)

Author keywords

Atomic layer etching; Complementary metal oxide semiconductor field effect transistors (CMOSFETs); High k dielectric; Plasma induced damage

Indexed keywords

ATOMS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; WET ETCHING;

ATOMIC LAYER ETCHING; CMOSFETS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRICAL CHARACTERISTIC; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; OFF-STATE LEAKAGE CURRENT; PLASMA INDUCED DAMAGE;

REACTIVE ION ETCHING;

EID: 84874823124     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.11.008     Document Type: Letter

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