Effect of in situ plasma treatment on high-k films after high-k removal with plasma etching from the S/D region

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 672-673

  Ju, B S ^a   Song, S C ^a   Lee, T H ^b   Sassman, B ^a   Kang, C Y ^a   Lee, B H ^c   Jammy, R ^c  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; PLASMA ETCHING; THRESHOLD VOLTAGE;

PLASMA DAMAGE; SHORT CHANNEL DEVICES;

DIELECTRIC FILMS;

EID: 34548753434     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369563     Document Type: Conference Paper

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