Plasma induced damage of aggressively scaled gate dielectric (EOT < 1.0nm) in metal gate/high-k dielectric CMOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 723-724

  Min, Kyung Seok ^a,b,c   Kang, Chang Yong ^a   Yoo, Ook Sang ^c,d   Park, Byoung Jae ^b   Kim, Sung Woo ^b   Young, Chadwin D ^a   Heh, Dawei ^a   Bersuker, Gennadi ^a   Lee, Byoung Hun ^a   Yeom, Geun Young ^b,e  

^a SEMATECH   (United States)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d Chungnam National University   (South Korea)

^e National Program for Tera Level Devices   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 51549101043     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4559007     Document Type: Conference Paper

References (8)

1. K. P. Cheung, Plasma Charging Damage
2. Vandervorst P2ID 2003, p 40
3. Toriumi. A P2ID 2002, p 4
4. Tzeng. P.J P2ID 2002, p 49
5. B. Guillaumot P2ID 2003, p 56
6. Erhong Li P2ID 2003, p 61
7. C.D. Young, G. Bersuker, F. Zhua, K. Matthewsb, R. Choi, S.C. Song IRPS 2007
8. G. V. den Bosch, et. al., ESSDERC, p.271, 2002