Mechanically flexible optically transparent porous mono-crystalline silicon substrate

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2012, Pages 281-284

  Rojas, J P ^a   Syed, A ^a   Hussain, M M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE WAFERS; FLEXIBLE MEMBRANES; FLEXIBLE SUBSTRATE; IS COSTS; REACTIVE ION; SILICON SUBSTRATES; THIN LAYERS;

MEMS; MONOCRYSTALLINE SILICON; SILICON WAFERS; SUBSTRATES;

FLEXIBLE ELECTRONICS;

EID: 84860491070     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2012.6170146     Document Type: Conference Paper

References (14)

1. C. C. Striemer, T. R. Gaborski, J. L. McGrath, P. M. Fauchet, "Charge- and size-based separation of macromolecules using ultrathin silicon membranes", Nature, vol. 445, pp. 749-753, 2007.
2. J. Sun, B. Zhang, H. E. Katz, "Materials useful for printable, transparent, and low-voltage transistors", Adv. Funct. Mater, vol. 21, pp. 29-45, 2011.
3. J. Burghartz, in Ultra-thin Chip Technology and Applications, Springer, Ed. 1, 2000.
4. H-C. Yuan, J. Shin, G. Qin, L. Sun, P. Bhattacharya, M. G. Lagally, G. K. Celler, Z. Ma, "Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes", Appl. Phys. Lett., vol. 94, 013102, 2009.
5. G. Qin, H-C. Yuan, H. Yang, W. Zhou, Z. Ma, "High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate", Semicond. Sci. and Tech., vol 26, 025005, 2011.
6. L. Sun, G. Qin, J.-H. Seo, G. K. Celler, W. Zhou, Z. Ma, "12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics", Small, vol 6, pp 2553-2557, 2010.
7. S. Mack, M. A. Meitl, A. J. Baca, Z.-T. Zhu, J. A. Rogers, "Mechanically flexible thin-film transistors that use ultrathin ribbons of silicon derived from bulk wafers", Appl. Phys. Lett., vol 88, 213101, 2006.
8. J. Yoon, A. J. Baca, S. Park, P. Elvikis, J. B. Geddes III, L. Li, R. H. Kim, J. Xiao, S. Wang, T. kim, M. J. Motala, B. Y. Ahn, E. B. Duoss, J. A. Lewis, R. G. Nuzzo, P. M. Ferreira, Y. Huang, A. Rockett, J. A. Rogers, "Ultrathin silicon solar microcells for semitransparent, mechanically flexible and microconcentrator module designs", Nat. Mater., vol 7, pp. 907-915, 2008.
9. A. J. Baca, J.-H. Ahn, Y. Sun, M. A. Meitl, E. Menard, H. Kim, W. M. Choi, D. Kim, Y. Huang, J. A. Rogers, "Semiconductor Wires and Ribbons for High- Performance Flexible Electronics", Angewandte Chemie International Edition, vol 47, issue 30, pp. 5524-5542, 2008.
10. M. M. Roberts, L. J. Klein, D. E. Savage, K. A. Slinker, M. Friesen, G. Celler, M. A. Eriksson, M. G. Lagally, "Elastically relaxed free-standing strained-silicon nanomembranes", Nat. Mater., vol 5, pp. 388-393, 2006.
11. S. Ju, A. Facchetti, Y. Xuan, J. Liu, F. Ishikawa, P. Ye, C. Zhou, T. J. Marks, D. B. Janes, "Fabrication of fully transparent nanowire transistors for transparent and flexible electronics", Nat. Nanotech., vol 2, pp. 378-384, 2007.
12. K. A. Shaw, Z. L. Zhang, N. C. MacDonald, "SCREAM I: a single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures", Sensors and Actuators A, vol 40, pp. 63-70, 1994.
13. M. J. de Boer, R. W. Tjerkstra, J. W. Berenschot, H. V. Jansen, G. J. Burger, J. G. E. Gardeniers, M. Elwenspoek, A. van den Berg, "Micromachining of Buried Micro Channels in Silicon", J. of Microelectromech. Sys., vol 9 (1), pp 94-103, 2000.
14. M. A. Guillorn, J. Chang, A. Pyzyna, S. Engelmann, M. Glodde, E. Joseph, R. Bruce, J. A. Ott, A. Majumdar, F. Liu, M. Brink, S. Bangsaruntip, M. Khater, S. Mauer, I. Lauer, C. Lavoie, Z. Zhang, J. Newbury, E. Kratschmer, D. P. Klaus, J. Bucchignano, B. To, W. Graham, E. Sikorski, V. Narayanan, N. Fuller, W. Haensch, "A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch", IEEE Symposium on VLSI Technology Digest of Technical Papers (Late News), Kyoto, Japan, June 14-16, 2011, pp. 64-65.