Mechanisms for room temperature direct wafer bonding

Journal of Applied Physics

Volumn 113, Issue 9, 2013, Pages

  Plach, T ^a   Hingerl, K ^a   Tollabimazraehno, S ^a   Hesser, G ^a   Dragoi, V ^b   Wimplinger, M ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b EV GROUP   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BOND INTERFACE; CHEMICAL MECHANISM; CONTACT AREAS; DIRECT WAFER BONDING; FREE SURFACE ENERGY; GAP CLOSING; HIGH STRENGTH; LOW TEMPERATURE WAFER BONDING; LOW-TEMPERATURE DIFFUSION; MODEL-BASED OPC; PLASMA TREATMENT; ROOM TEMPERATURE; SI WAFER; THERMAL BUDGET; TOTAL ENERGY;

AUGER ELECTRON SPECTROSCOPY; BOND STRENGTH (MATERIALS); PLASMA APPLICATIONS; SILICON; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

EID: 84874759650     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794319     Document Type: Article

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