Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding

Materials Chemistry and Physics

Volumn 81, Issue 2-3, 2003, Pages 277-280

  Reznicek, A ^a   Scholz, R ^a   Senz, S ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Interface defects; Silicon; Wafer bonding

Indexed keywords

BOND STRENGTH (MATERIALS); DISLOCATIONS (CRYSTALS); HYDROGEN BONDS; HYDROPHILICITY; HYDROPHOBICITY; INTERFACES (MATERIALS); SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

NANOROUGHNESS;

SILICON WAFERS;

EID: 0037697385     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(02)00601-6     Document Type: Conference Paper

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