Functional nanocrystal-based memories with extraction of nanocrystals properties by charge pumping technique

Solid-State Electronics

Volumn 82, Issue , 2013, Pages 11-15

  Diaz, R ^a,b   Grisolia, J ^a   Pecassou, B ^b   Shalchian, M ^c   Benassayag, G ^b  

^a INSA   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c AMIRKABIR UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Charge pumping technique; Embedded silicon nanocrystal; Ion implantation; Memory endurance; Non volatile memory

Indexed keywords

2D ARRAYS; ANNEALING CONDITION; CHARGE PUMPING TECHNIQUE; CHARGE RETENTION; EFFECTIVE SIZE; GATE OXIDE; MEMORY PERFORMANCE; MEMORY WINDOW; NON-VOLATILE MEMORIES; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SYNTHESIS TECHNIQUES; TRAPPING CENTERS;

CHARGE TRAPPING; DAMAGE DETECTION; DATA STORAGE EQUIPMENT; ION IMPLANTATION; SILICON;

NANOCRYSTALS;

EID: 84874680331     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.01.022     Document Type: Article

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