Scaling analysis of nanowire phase-change memory

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1340-1342

  Liu, Jie ^a   Yu, Bin ^b   Anantram, M P ^a  

^a University of Washington   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Device scaling; electrothermal transport; nanowire (NW); phase change memory (PCM); reset current and energy

Indexed keywords

DEVICE SIZES; DEVICE-SCALING; ELECTROTHERMAL TRANSPORT; OPERATION SCHEMES; OPERATION SPEED; PHASE CHANGES; PHASE-CHANGE MEMORY (PCM); RESET CURRENTS; SCALING ANALYSIS; SCALING PROPERTIES; THERMAL FLUXES;

ASPECT RATIO; ELECTRIC FIELDS; ENERGY UTILIZATION; NANOWIRES; NUMERICAL METHODS;

PHASE CHANGE MEMORY;

EID: 80053566145     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162390     Document Type: Article

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