Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Liao, Zhi Ming ^a   Chen, Zhi Gang ^a   Lu, Zhen Yu ^b   Xu, Hong Yi ^a   Guo, Ya Nan ^a   Sun, Wen ^a   Zhang, Zhi ^a   Yang, Lei ^a   Chen, Ping Ping ^b   Lu, Wei ^b   Zou, Jin ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOPARTICLE; FORMATION MECHANISM; GAAS; GAAS(111); GROWTH BEHAVIOUR; HIGH TEMPERATURE; LOW TEMPERATURES; SEMICONDUCTOR NANOWIRE;

ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOPARTICLES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SUBSTRATES;

GOLD;

EID: 84874244531     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792053     Document Type: Article

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