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Volumn 52, Issue 2, 2013, Pages

Photoelectron spectroscopy and optical properties of al-doped zno films prepared by sputtering with radio frequency power applied to al target

(4) Tseng, Chun An a Lin, Jing Chie a Weng, Wei Heng a Lin, Chen Chun b

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b UNIVERSITÉ DE TECHNOLOGIE DE TROYES (France)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONTENT; AL-DOPED ZNO; AL-DOPED ZNO FILMS; AZO FILMS; CHARACTERISTIC PEAKS; CHEMICAL COMPOSITIONS; DC POWER; ELECTRICAL RESISTIVITY; FOUR-POINT PROBE; GLASS SUBSTRATES; GRAZING INCIDENCE X-RAY DIFFRACTION; MAGNETRON SPUTTERING SYSTEMS; METALLIC ALUMINUM; RADIO FREQUENCY POWER; RF-POWER; UV-VISIBLE; VALENCE ELECTRON; VISIBLE REGION; XPS ANALYSIS; ZNO; ZNO FILMS;

ELECTRIC CONDUCTIVITY; ENERGY DISPERSIVE SPECTROSCOPY; FILM PREPARATION; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOELECTRONS; POWER SUPPLY CIRCUITS; RADIO WAVES; SEMICONDUCTOR DOPING; SUBSTRATES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; UNINTERRUPTIBLE POWER SYSTEMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ALUMINUM;

EID: 84874137888 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.025801 Document Type: Article

Times cited : (17)

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