Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

Applied Surface Science

Volumn 258, Issue 16, 2012, Pages 5996-6002

  Tseng, Chun An ^a   Lin, Jing Chie ^a   Chang, Yu Fong ^a   Chyou, San Der ^b   Peng, Kun Cheng ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b TAIWAN POWER COMPANY   (Taiwan)

^c MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

AZO films; HRTEM; Magnetron sputtering; Radio frequency; UPS

Indexed keywords

ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; FILM PREPARATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; OXIDE FILMS; RADIO WAVES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SPECTROMETERS; STACKING FAULTS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; UNINTERRUPTIBLE POWER SYSTEMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

AZO FILMS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; HRTEM; MAGNETRON SPUTTERING SYSTEMS; RADIO FREQUENCIES; TRANSPARENT CONDUCTIVE FILMS; TRANSPARENT CONDUCTIVE OXIDE FILMS;

OPTICAL FILMS;

EID: 84862798583     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.02.061     Document Type: Article

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